National Aeronautics And Space Administration- National Aeronautics And Space Administration- Nasa Shared Services Center
Dry etching of Combined Gallium Nitride Epitaxial Layer and Silicon Carbide Substrate - See the attached SOW. All correspondence should reference ID# to ensure visibility. * PLEASE NOTE* THIS IS NOT A REQUEST FOR QUOTES. ANY PRICE OFFERS RECIEVED WILL NOT BE REVIEWED /ACCEPTED AT THIS TIM
Dry etching of gallium nitride epitaxial layer and silicon carbide substrate Lot 1: Fabrication of a 3- inch, 350- micron thick single crystal 4H- SiC wafer with a patterned nickel etch mask. Etching the wafer to 280 microns to a diaphragm of approximately 70 microns thickness. Diaphragm radii from 300 to 900 microns. Achieving a smooth diaphragm with fewer than 5 micro mask artifacts on each etched diaphragm surface. Diaphragm thickness uniformity across the wafer of +/- 5% of 70 microns. Achieving smooth diaphragm features free of scallops. Reasonable radius at the intersection of the diaphragm base with the sidewall, without notching. No edgewall trenching artifacts at the intersection of the diaphragm base and sidewall. Aspect ratio ( etched depth/etched width) no less than 5, higher aspect ratio preferred. Dry etching the top side pGaN to 3 m SiO2 etch mask to expose the 4H- SiC surface. Confirming etched depth to be 3 microns. Lot 2: Solvent cleaning of the wafer in acetone, followed by isopropanol. De
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