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Laser Etching Equipment/ Laser Etching Tools/ Laser Etching Devices
Laser Etcher - * THIS IS A SOURCES SOUGHT* This is a new requirement for the 74th Fighter Generation Squadron to procure one ( 1) commercial- off- the- shelf ( COTS) laser etcher system. The primary purp
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Etching Tools/ Reactive Ion Etching/ Vapor Hydrofluoric Acid Etching
Two semiconductor- process compatible dry pumps - Synopsis: NASA/NSSC has a requirement for two semiconductor- process compatible dry pumps. NASA/NSSC intends to issue a sole source contract to EBARA TECHNOLOGIES INC: 51 MAIN AVE SACRAMENTO, CA 958
Semiconductor process compatible dry pumps Item 1: Ebara vacuum pumps, Model: EVS20P, Part Number: ****, Specifications: ****, 200- 220v, 50/60hz, NWSO. Quantity: 2 each. Item 2: Power cables, Part Number: ****, Description: Cable assembly, power, EVA103, VOS 100, EVS20, 6ft, open end. Quantity: 2 each.
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Stripping of Paddle Tennis Court # 2 at Weed Beach
Stripping and resurfacing of paddle tennis court 2 at Weed Beach Stripping of paddle tennis court 2 at Weed Beach, including removal of old gaskets, stripping deck to bare aluminum, cleaning debris, mechanical and chemical etching, priming, applying aggregate coats, applying white lines, painting net posts, and installing new net and center strap.
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REPROCESSING SINK - BATTLE CREEK - BRAND NAME OR EQUAL - This amendment was issued to: 1. Change the soclicitation from Brand Name Only, to Brand Name or Equal 2. Removed CLIN 23 3. Add & quot; Salient Characteristics& quot; This is a Brand Name or Equal request to
Endoscopy reprocessing sink 1 Endoscopy reprocessing sink, quantity 1, will require the PureSteel Healthcare reprocessing brand, part number PS **** HA 03 **** specifications: specifically designed for the cleaning of endoscopes, overall size 97. 5 L x 30 W, height adjustable, three basins measuring 30 x 18 x 10 with telescoping drains, ergonomics including 45- degree wrist rests ( one per basin for a total of three), adjustable height by push button access, and 10 gooseneck swivel spout sprayer with ergonomic grip. Sink light hood, one in 4 L and one in 2 L. Flat bottom support shelf that mounts to pegboard backing, 14 x 12 x 1. 5. Water resistant programmable timer with alarm function ( minutes and seconds), 9. 75 L x 4. 75 H x 3 D. Task halogen light, 27 gooseneck arm with 2x magnifier. Water resistant back wall pegboard, height adjustable with the sink, 97. 5 L x 24 H, standard pegs throughout. Additional accompaniments: volume indicator etching plate, one per basin. Wall mounted sink facet,
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Semiconductor Etching/ Dry Etching/ Deep Reactive Ion Etching/ Diaphragm Etching
Dry etching of Combined Gallium Nitride Epitaxial Layer and Silicon Carbide Substrate - See the attached SOW. All correspondence should reference ID# to ensure visibility. * PLEASE NOTE* THIS IS NOT A REQUEST FOR QUOTES. ANY PRICE OFFERS RECIEVED WILL NOT BE REVIEWED /ACCEPTED AT THIS TIM
Dry etching of gallium nitride epitaxial layer and silicon carbide substrate Lot 1: Fabrication of a 3- inch, 350- micron thick single crystal 4H- SiC wafer with a patterned nickel etch mask. Etching the wafer to 280 microns to a diaphragm of approximately 70 microns thickness. Diaphragm radii from 300 to 900 microns. Achieving a smooth diaphragm with fewer than 5 micro mask artifacts on each etched diaphragm surface. Diaphragm thickness uniformity across the wafer of +/- 5% of 70 microns. Achieving smooth diaphragm features free of scallops. Reasonable radius at the intersection of the diaphragm base with the sidewall, without notching. No edgewall trenching artifacts at the intersection of the diaphragm base and sidewall. Aspect ratio ( etched depth/etched width) no less than 5, higher aspect ratio preferred. Dry etching the top side pGaN to 3 m SiO2 etch mask to expose the 4H- SiC surface. Confirming etched depth to be 3 microns. Lot 2: Solvent cleaning of the wafer in acetone, followed by isopropanol. De
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