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Semiconductor Fabrication
Thin Film Fabrication Supplies - Montana State University is soliciting bids for Nitride Molecular Beam Epitaxy equipment, components, accessories, and related items.
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Semiconductor Fabrication Equipment
STS Deep Reactive Ion Etcher Upgrade - The University of Wisconsin- Madison' s Nanoscale Fabrication Center is requesting bids for the purchase of an upgrade to their STS Deep Reactive Ion Etcher.
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Semiconductor Inks/ High Throughput Fabrication/ Semiconductors
TECHNOLOGY LICENSING OPPORTUNITY: Electrically Pumped Nanocrystal Laser Diode - The Electrically Pumped Nanocrystal Laser Diode is a solution- processed laser technology developed by scientists at Los Alamos National Laboratory that enables electrically driven laser emission using engineered colloidal nanocrystals, also known
Electrically pumped nanocrystal laser diode Electron tubes and associated hardware
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Sensor Fabrication/ Semiconductor Manufacturing
AsgtroPix development of detectors - Synopsis: NASA/NSSC has a requirement for AsgtroPix development of detectors. NASA/NSSC intends to issue a sole source contract to KARLSRUHER INSTITUT FUER TECHNOLOGIE: KAISERSTR. 12 Karlsruhe ****
Development of detectors Design and fabrication of silicon CMOS pixel detectors for ASG ???? isFM, including a small test chip, a test system for sensor characterization, and a full chip based on a validated design.
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Wafer Fabrication/ Semiconductor Etching/ Semiconductor Manufacturing
Dry etching of Combined Gallium Nitride Epitaxial Layer and Silicon Carbide Substrate - See the attached SOW. All correspondence should reference ID# to ensure visibility. * PLEASE NOTE* THIS IS NOT A REQUEST FOR QUOTES. ANY PRICE OFFERS RECIEVED WILL NOT BE REVIEWED /ACCEPTED AT THIS TIM
Dry etching of gallium nitride epitaxial layer and silicon carbide substrate Lot 1: Fabrication of a 3- inch, 350- micron thick single crystal 4H- SiC wafer with a patterned nickel etch mask. Etching the wafer to 280 microns to a diaphragm of approximately 70 microns thickness. Diaphragm radii from 300 to 900 microns. Achieving a smooth diaphragm with fewer than 5 micro mask artifacts on each etched diaphragm surface. Diaphragm thickness uniformity across the wafer of +/- 5% of 70 microns. Achieving smooth diaphragm features free of scallops. Reasonable radius at the intersection of the diaphragm base with the sidewall, without notching. No edgewall trenching artifacts at the intersection of the diaphragm base and sidewall. Aspect ratio ( etched depth/etched width) no less than 5, higher aspect ratio preferred. Dry etching the top side pGaN to 3 m SiO2 etch mask to expose the 4H- SiC surface. Confirming etched depth to be 3 microns. Lot 2: Solvent cleaning of the wafer in acetone, followed by isopropanol. De
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