Commerce, Department Of- National Institute Of Standards And Technology- Dept Of Commerce Nist
Combined Sources Sought Notice/Notice of Intent to Sole Source for Advanced GaN foundry fabrication for D- band devices and circuits. - please see attached.
combined sources sought notice 1 advanced dband gan hemt process demonstrated transistor output power density of greater than 2. 3 wmm with associated power gain in dband repeatable measurement at optimal bias point, for power amplifier applications. rf performance with reproducible fabrication and highyield at dband frequencies. 2 advanced dband gan hemt mmic fabrication run dedicated mask set utilizing provided device and circuit designs layout in a gds format. fabrication using an advanced, dband capable, gan mmic foundry process with thinned wafer backside vias and backside metallization at least 2 wafers fabrication process must include airbridge, metalinsulatormetal mim capacitor and thinfilm resistor capabilities. transistor scalable width. 3 dband monolithic microwave integrated circuit mmic process design kit pdk scalable smallsignal and largesignal transistor models for dband operation gan hemt model and pdk must be compatible with ads momentum pdk must include layout definition files for transistor
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